ESM5045DV Datasheet, PDF (1/8 Pages) STMicroelectronics – NPN DARLINGTON POWER MODULE

ESM5045DV
NPN DARLINGTON POWER MODULE
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW R_th JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s ULTRAFAST FREEWHEELING DIODE
s ISOLATED CASE (2500V RMS)
s EASY TO MOUNT
s LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
s SMPS & UPS
s WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Par am e te r
VCEV Collector-Emitter Voltage (VBE = -5 V)
V_CEO(sus) Collector-Emitter Voltage (I_B = 0)
V_EBO Emitter-Base Voltage (I_C = 0)
IC Collector Current
ICM Collector Peak Current (tp = 10 ms)
I_B
Base Current
I_BM Base Peak Current (t_p = 10 ms)
P_tot Tot al Dissipation at T_c = 25 ^oC
Tstg Storage Temperature
Tj Max. Ope rating Junction Temperature
V_ISO Insulation Withstand Voltage (AC-RMS)
September 1997
Value
600
450
7
60
90
6
12
175
-55 to 150
150
2500
Unit
V
V
V
A
A
A
A
W
o_C
o_C
o_C
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