BYT01400 Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

®
BYT01-400
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
) ^VRRM
t(s ^{Tj (max)}
c _{VF (max)}
du _{trr (max)}
1A
400 V
150°C
1.4 V
25 ns
Pro _{FEATURES AND BENEFITS}
te s Very low conduction losses
le s Negligible switching losses
o _{s Low forward & reverse recovery times}
bs _DESCRIPTION
O _{The BYT01-400 which is using ST’s 400V planar}
- _{technology, is specially suited for switching mode}
) _{base drive & transistor circuits.}
t(s _{The device, which is available in axial (DO-15)}
c _{package, is also intended for use as a free}
u _{wheeling diode in power supplies and other power}
d _{switching applications.}
Pro _{ABSOLUTE RATINGS (limiting values)}
lete _Symbol
Parameter
Obso^{VRRM Repetive peak reverse voltage}
DO-15
BYT01-400
Value
Unit
400
V
I_{F (AV) Average forward current}
TI = 80°C δ = 0.5
1
A
I_{FSM Surge non repetitive forward current tp = 10ms Sinusoidal}
30
A
T_stg
Storage temperature range
- 65 to +150
°C
T_j
Maximum operating junction temperature
150
°C
October 2001 - Ed: 2A
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