BYT01-400_01 Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

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BYT01-400
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
T_j (max)
V_F (max)
trr (max)
1A
400 V
150°C
1.4 V
25 ns
FEATURES AND BENEFITS
s Very low conduction losses
s Negligible switching losses
s Low forward & reverse recovery times
DESCRIPTION
The BYT01-400 which is using ST’s 400V planar
technology, is specially suited for switching mode
base drive & transistor circuits.
The device, which is available in axial (DO-15)
package, is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
DO-15
BYT01-400
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
V_{RRM Repetive peak reverse voltage}
400
V
I_{F (AV) Average forward current}
TI = 80°C δ = 0.5
1
A
I_{FSM Surge non repetitive forward current tp = 10ms Sinusoidal}
30
A
T_stg
Storage temperature range
- 65 to +150
°C
T_j
Maximum operating junction temperature
150
°C
October 2001 - Ed: 2A
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