BUZ80A Datasheet, PDF (1/10 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode)

BUZ80A
BUZ80AFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
BUZ80A
BUZ80AFI
VDSS
800 V
800 V
R DS( on)
<3Ω
<3Ω
ID
3.8 A
2.4 A
s TYPICAL R_DS(on) = 2.5 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW INPUT CAPACITANCE
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
V_{D S}
V_{DG R}
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
VGS
I_D
I_D
ID M(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at T _c = 25 ^oC
Drain Current (continuous) at T _c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
April 1993
Val ue
BUZ80A
BUZ80AFI
800
800
± 20
3.8
2.4
2.3
1.4
15
15
100
40
0.8
0. 32

2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/^oC
V
o_C
o_C
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