BUX87 Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

®
BUX87
HIGH VOLTAGE NPN
SILICON POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY (450V VCEO)
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s HIGH DC CURRENT GAIN
APPLICATIONS
s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUX87 is manufactured using High Voltage
Multi-Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
September 2003
Value
1000
450
5
0.5
1
0.3
0.6
40
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o_C
o_C
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