BUX10_03 Datasheet, PDF (1/4 Pages) STMicroelectronics – HIGH POWER NPN SILICON TRANSISTOR

®
BUX10
HIGH POWER NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
APPLICATIONS
s MOTOR CONTROL
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX10 is a silicon Multi-Epitaxial Planar
NPN transistor in Jedec TO-3 metal case,
intended for use in switching and linear
applications in military and industrial equipment.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (VBE = - 1.5V)
Collector-emitter Voltage (IB = 0)
Emitter-base Voltage (IC = 0)
Collector Current
Collector Peak Current (tP < 10 ms)
Base Current
Total Power Dissipation at Tcase
Storage Temperature
≤ 25 ^oC
Max Operating Junction Temperature
March 2003
Value
160
160
125
7
25
30
5
150
-65 to 200
200
Unit
V
V
V
V
A
A
A
W
o_C
o_C
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