BUV98AV_03 Datasheet, PDF (1/7 Pages) STMicroelectronics – NPN TRANSISTOR POWER MODULE

®
BUV98AV
NPN TRANSISTOR POWER MODULE
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
s LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS
s MOTOR CONTROL
s SMPS & UPS
s WELDING EQUIPMENT
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEV Collector-Emitter Voltage (VBE = -5 V)
VCEO(sus) Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current (tp < 10 ms)
IB
Base Current
IBM Base Peak Current (tp < 10 ms)
Ptot Total Dissipation at Tc = 25 ^oC
Visol Insulation Withstand Voltage (RMS) from All
Four Terminals to External Heatsink
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
March 2003
Value
1000
450
7
30
60
8
16
150
2500
-55 to 150
150
Unit
V
V
V
A
A
A
A
W
V
o_C
o_C
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