BUV61 Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH POWER NPN SILICON TRANSISTOR

®
BUV61
HIGH POWER NPN SILICON TRANSISTOR
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s FULLY CHARACTERIZED AT 125^oC
APPLICATION
s SWITCHING REGULATORS
s MOTOR CONTROL
DESCRIPTION
The BUV61 is a Multi-Epitaxial planar NPN
transistor in TO-3 metal case.
It is intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.
1
2
TO-3
(version " S ")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEV
VCEO
VEBO
IC
ICM
IB
IBM
PBase
Ptot
Tstg
Tj
Parameter
Collector-emitter Voltage (VBE = -1.5V)
Collector-emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Reverse Bias Base Dissipation
(B.E. junction in avalanche)
Total Power Dissipation at Tcase < 25 ^oC
Storage Temperature
Max Operating Junction Temperature
October 2003
Value
300
200
7
50
75
8
15
2
250
-65 to 200
200
Unit
V
V
V
A
A
A
A
W
W
o_C
o_C
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