BUV298V Datasheet, PDF (1/7 Pages) STMicroelectronics – NPN TRANSISTOR POWER MODULE

BUV298V
NPN TRANSISTOR POWER MODULE
s NPN TRANSISTOR
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW R_th JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s ISOLATED CASE (2500V RMS)
s EASY TO MOUNT
s LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
s MOTOR CONTROL
s SMPS & UPS
s WELDING EQUIPMENT
Pin 4 not con nected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEV Collector-Emitter Voltage (VBE = -5 V)
V_CEO(sus) Collector-Emitter Voltage (I_B = 0)
V_EBO Emitt er-Base Voltage (I_C = 0)
IC
Collector Current
ICM Collect or Peak Current (tp = 10 ms)
I_B
Base Current
IBM Base Peak Current (tp = 10 ms)
P_tot Total Dissipation at T_c = 25 ^oC
Tstg St orage Temperature
T_j
Max. Operating Junction Temperature
V_ISO Insulation W it hst and Volt age (AC-RMS)
June 1997
Value
1000
450
7
50
75
10
16
250
-55 to 150
150
2500
Uni t
V
V
V
A
A
A
A
W
o_C
o_C
V
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