BUV298AV_01 Datasheet, PDF (1/7 Pages) STMicroelectronics – NPN TRANSISTOR POWER MODULE

®
BUV298AV
NPN TRANSISTOR POWER MODULE
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s INSULATED CASE (2500V RMS)
s EASY TO MOUNT
s LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
s SMPS & UPS
s WELDING EQUIPMENT
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEV Collector-Emitter Voltage (VBE = -5 V)
VCEO(sus) Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current (tp = 10 ms)
IB
Base Current
IBM Base Peak Current (tp = 10 ms)
Ptot Total Dissipation at TC = 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
VISO Insulation Withstand Voltage (AC-RMS)
October 2001
Value
1000
450
7
50
75
10
16
250
-55 to 150
150
2500
Unit
V
V
V
A
A
A
A
W
o_C
o_C
o_C
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