BUV20 Datasheet, PDF (1/4 Pages) Motorola, Inc – 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS

®
BUV20
HIGH CURRENT NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s HIGH RUGGEDNESS
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
s SWITCHING REGULATORS
DESCRIPTION
The BUV20 is silicon Multiepitaxial Planar NPN
transistor mounted in jedec TO-3 metal case. It is
intended for use in switching and linear
applications in military and industrial equipment.
1
2
TO-3
(version "S")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCER
VCEX
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (RBE = 100Ω)
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation at Tcase ≤ 25 ^oC
Storage Temperature
Junction Temperature
January 2000
Value
160
150
160
125
7
50
60
10
250
-65 to 200
200
Unit
V
V
V
V
V
A
A
A
W
o_C
o_C
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