BUT90 Datasheet, PDF (1/4 Pages) STMicroelectronics – HIGH POWER NPN SILICON TRANSISTOR

BUT90
HIGH POWER NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s HIGH RUGGEDNESS
s LOW COLLECTOR EMITTER SATURATION
APPLICATIONS
s UNINTERRUPTABLE POWER SUPPLY
s MOTOR CONTROL
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUT90 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
1
2
TO-3
(version "S")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEV Collector-Emitter Voltage (VBE = -1.5 V)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current
IB
Base Current
IBM Base Peak Current
Ptot Total Power Dissipation at Tcase ≤ 25 ^oC
Tstg Storage Temperature
Tj
Junction Temperature
April 1997
Value
200
125
10
50
120
12
32
250
-65 to 200
200
Unit
V
V
V
A
A
A
A
W
o_C
o_C
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