BUT100 Datasheet, PDF (1/4 Pages) STMicroelectronics – HIGH POWER NPN SILICON TRANSISTOR

BUT100
HIGH POWER NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s HIGH RUGGEDNESS
APPLICATION
s MOTOR CONTROL
s UNINTERRUPTABLE POWER SUPPLY
DESCRIPTION
The BUT100 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
1
2
TO-3
(version " S ")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEV
VCEO
VEBO
IE
IEM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Emitter Current
Emitter Peak Current
Base Current
Base Peak Current
Total Dissipation at Tc < 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
April 1997
Value
200
125
7
50
150
10
30
300
-65 to 200
200
Unit
V
V
V
A
A
A
A
W
o_C
o_C
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