BUR52 Datasheet, PDF (1/4 Pages) STMicroelectronics – HIGH CURRENT NPN SILICON TRANSISTOR

BUR52
HIGH CURRENT NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s MAINTAINS GOOD SWITCHING
PERFORMANCE EVEN WITHOUT
NEGATIVE BASE DRIVE
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUR52 is a silicon multiepitaxial planar NPN
transistors in modified Jedec TO-3 metal case,
intented for use in switching and linear
applications in military and industrial equipment.
1
2
TO-3
(version " P ")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp = 10 ms)
Base Current
Total Dissipation at Tc ≤ 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
June 1997
Value
350
250
10
60
80
16
350
-65 to 200
200
Unit
V
V
V
A
A
A
W
o_C
o_C
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