BULT3P3 Datasheet, PDF (1/8 Pages) STMicroelectronics – Low spread of dynamic parameters

BULT3P3
Medium voltage fast-switching PNP power transistor
Features
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
Application
■ Electronic ballast for fluorescent lighting
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the BULT3N4, its
complementary NPN transistor.
SOT-32
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Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
BULT3P3
BULT3P3
September 2009
Package
SOT-32
Doc ID 16300 Rev 1
Packing
Tube
1/8
www.st.com
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