BULT118 Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

®
BULT118
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
APPLICATIONS:
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CES
VCEO
V EBO
IC
I_CM
I_B
I_BM
P_tot
Tstg
Tj
Parameter
Collector-Emitter Voltage (V_BE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (t_p < 5 ms)
Base Current
Base Peak Current (t_p < 5 ms)
Total Dissipation at T_c = 25 ^oC
St orage Temperature
Max. Operating Junction Temperature
June 2000
Value
700
400
9
2
4
1
2
45
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
o_C
o_C
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