BULT116D Datasheet, PDF (1/6 Pages) STMicroelectronics – MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
BULT116D
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
PRELIMINARY DATA
APPLICATIONS:
s COMPACT FLUORESCENT LAMPS UP TO
23 W AT 110 V A.C. MAINS
s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
AT 110 V A.C. MAINS
1
2
3
SOT-32
DESCRIPTION
The device is manufactured using Multi Epitaxial
Planar technology for high switching speeds and
medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
February 2003
Value
400
200
9
5
10
2
4
45
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o_C
o_C
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