BULD1101E Datasheet, PDF (1/11 Pages) STMicroelectronics – High voltage fast-switching NPN Power Transistor

BULD1101E
High voltage fast-switching NPN Power Transistor
General features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ In compliance with the 2002/93/EC European
Directive
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
Applications
■ Electronic ballast for fluorescent lighting
3
1
DPAK
TO-252
IPAK
TO-251
3
2
1
Internal schematic diagram
Order codes
Part number
Marking
BULD1101ET4
BULD1101E-1
BULD1101E
BULD1101E
Package
DPAK
IPAK
May 2007
Rev 2
Packaging
Tape & reel
Tube
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www.st.com
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