BUL903EDFP Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
BUL903EDFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
s INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s ARCING TEST SELF PROTECTED
s FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
s FOUR LAMP ELECTRONIC BALLAST FOR
120 V MAINS IN PUSH-PULL
CONFIGURATION
DESCRIPTION
The BUL903EDFP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed to operate without
baker clamp and transil protection. This enables
saving from 2 up to 10 components in the
application.
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Visol
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp <5 ms)
Base Current
Base Peak Current (tp <5 ms)
Total Dissipation at Tc = 25 ^oC
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
September 2003
Value
900
400
7
5
8
2
4
35
1500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
V
o_C
o_C
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