BUL903ED Datasheet, PDF (1/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
BUL903ED
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
s INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s ARCING TEST SELF PROTECTED
APPLICATIONS
s LAMP ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING USING 277V
HALF BRIDGE CURRENT-FED
CONFIGURATION
DESCRIPTION
The BUL903ED is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed in order to
operate without baker clamp and transil
protection. This enables saving from 2 up to 10
components in the application.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
VCES
V CEO
V _EBO
I_C
ICM
I_B
IBM
P_tot
T_stg
Tj
Parameter
Collector-Emit ter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp <5 ms)
Base Current
Base Peak Current (tp <5 ms)
Total Dissipation at Tc = 25 ^oC
Storage Temperature
Max. O perating Junction Temperature
June 1998
Value
900
400
7
5
8
2
4
70
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
o_C
o_C
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