BUL742C Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL742C
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
Ordering Code Marking
BUL742C
BUL742C
Package / Shipment
TO-220 / Tube
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
APPLICATIONS:
s ELECTRONIC BALLAST FOR FLUORESCENT
LIGHTING
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high switching
speeds and high voltage capability.
Thanks to an increased intermediate layer, it has an
intrinsic ruggedness which enables the transistor to
withstand an high collector current level during
breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CES Collector-Emitter Voltage (V_BE = 0)
V_CEO Collector-Emitter Voltage (I_B = 0)
V_EBO Emitter-Base Voltage (I_C = 0, I_B < 2 A, t_p < 10 ms)
I_C
Collector Current
I_CM
Collector Peak Current (t_p < 5 ms)
I_B
Base Current
I_BM
Base Peak Current (t_p < 5 ms)
P_tot
Total Dissipation at T_c = 25 °C
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
April 2003
Value
1050
400
V_(BR)EBO
4
8
2
4
70
–65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
1/7