BUL742 Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
BUL742
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s LARGE RBSOA
APPLICATIONS
s ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL742 is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintening the wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES Collector-Emitter Voltage (VBE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO
IC
Emitter-Base Voltage
(IC = 0, IB = 0.75 A, tp < 10µs, Tj < 150^oC)
Collector Current
ICM Collector Peak Current (tp <5 ms)
IB
Base Current
IBM Base Peak Current (tp <5 ms)
Ptot Total Dissipation at Tc = 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
June 2001
Value
900
400
BVEBO
4
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o_C
o_C
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