BUL58D Datasheet, PDF (1/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL58D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s LOW BASE-DRIVE REQUIREMENTS
s VERY HIGH SWITCHING SPEED
s FULLY CHARACTERISED AT 125^oC
s HIGH RUGGEDNESS
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL58D is manufactured using high voltage
Multi Epitaxial Planar technology to enhance
switching speeds while maintaining a wide
RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
V_CEO
V _EBO
IC
ICM
I_B
IBM
P_tot
Tstg
T_j
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (I_B = 0)
Emitt er-Base Voltage (I_C = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at T_c = 25 ^oC
St orage Temperature
Max. Operating Junction Temperature
Value
800
450
9
8
16
4
8
85
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
o_C
o_C
September 1997
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