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BUL3N7 Datasheet, PDF (1/10 Pages) STMicroelectronics – MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL3N7
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
Features
■ MEDIUM VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
Applications
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
Description
The BUL3N7 is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is expressly designed for a new
solution to be used in compact fluorescent lamps,
H.F. ballast voltage FED where it is coupled with
the BUL3P5, its complementary PNP transistor.
3
2
1
TO-220
Internal Schematic Diagram
Order Codes
Part Number
BUL3N7
December 2005
Marking
BUL3N7
Package
TO-220
Packing
TUBE
rev.1
1/10
www.st.com
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