BUL310_02 Datasheet, PDF (1/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
BUL310
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s FULLY CHARACTERISED AT 125^oC
s LARGE RBSOA
APPLICATIONS
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CES
VCEO
V_EBO
IC
I_CM
I_B
I_BM
Ptot
T_stg
Tj
Parameter
Collector-Emitter Voltage (V_BE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (I_C = 0)
Collector Current
Collector Peak Current (t_p <5 ms)
Base Current
Base Peak Current (t_p <5 ms)
Total Dissipation at Tc = 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
February 2002
Value
1000
500
9
5
10
3
4
75
-65 to 150
150
Unit
V
V
V
V
A
A
A
W
o_C
o_C
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