BUL310PI Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

BUL310
BUL310PI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s FULLY CHARACTERISED AT 125^oC
s LARGE RBSOA
s U.L. RECOGNISED ISOWATT220 PACKAGE
(U.L. FILE # E81734 (N)):
ISOLATION VOLTAGE 1500VRMS
APPLICATIONS
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL310 and BUL310PI are manufactured
using high voltage Multi Epitaxial Planar
technology for high switching speeds and high
voltage capability. They use a Cellular Emitter
structure with planar edge termination to enhance
switching speeds while maintaining a wide
RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
VCES
V _CEO
V _EBO
IC
I_CM
IB
I_BM
P_tot
Tstg
T_j
Collector-Emit ter Voltage (VBE = 0)
Collector-Emitter Voltage (I_B = 0)
Emitter-Base Voltage (I_C = 0)
Collector Current
Collector Peak Current (t_p <5 ms)
Base Current
Base Peak Current (t_p <5 ms)
Total Dissipation at Tc = 25 ^oC
Storage Temperature
Max. O perating Junction Temperature
September 1997
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Value
BUL 310
BUL310PI
1000
500
9
5
10
3
4
75
35
-65 to 150
150
Uni t
V
V
V
V
A
A
A
W
o_C
o_C
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