BUL213_03 Datasheet, PDF (1/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
BUL213
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s LOW BASE-DRIVE REQUIREMENTS
s VERY HIGH SWITCHING SPEED
s FULLY CHARACTERIZED AT 125^oC
APPLICATIONS
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL213 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
February 2003
Value
1300
600
9
3
6
2
4
60
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o_C
o_C
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