BUL128D-B_05 Datasheet, PDF (1/8 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL128D-B
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n STMicroelectronics PREFERRED SALES
TYPE
n NPN TRANSISTOR
n HIGH VOLTAGE CAPABILITY
n LOW SPREAD OF DYNAMIC PARAMETERS
n MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n VERY HIGH SWITCHING SPEED
n INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
APPLICATIONS
n ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
n FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
Table 1: Order Codes
Part Number
BUL128D-B
Marking
BUL128D-B
Figure 1: Package
3
2
1
TO-220
Figure 2: Internal Schematic Diagram
Package
TO-220
Packaging
Tube
Table 2: Absolute Maximum Ratings
Symbol
V_CES
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
Parameter
Collector-Emitter Voltage (V_BE = 0)
Collector-Emitter Voltage (I_B = 0)
Emitter-Base Voltage
(I_C= 0, I_B = 2 A, t_p < 10 µs, T_J = 150 ^oC)
Collector Current
Collector Peak Current (t_p < 5ms)
Base Current
Base Peak Current (t_p < 5ms)
February 2005
Value
700
400
V_(BR)EBO
4
8
2
4
Rev. 2
Unit
V
V
V
A
A
A
A
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