BUL128D-B Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
BUL128D-B
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CES
V_CEO
V EBO
I_C
I_CM
IB
IBM
P_tot
T_stg
Tj
Parameter
Collector-Emit ter Volt age (V_BE = 0)
Collector-Emitter Voltage (I_B = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (t_p < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at T_c = 25 ^oC
St orage Temperature
Max. Operating Junction Temperature
November 1998
Value
700
400
9
4
8
2
4
70
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
o_C
o_C
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