BUL1102EFP Datasheet, PDF (1/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
BUL1102EFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
s FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during Breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Visol
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp <5 ms)
Base Current
Base Peak Current (tp <5 ms)
Total Dissipation at Tc = 25 ^oC
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
September 2003
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
1100
450
12
4
8
2
4
30
1500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o_C
o_C
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