BU208D Datasheet, PDF (1/8 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

BU208D
®
BU508D/BU508DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s BU208D AND BU508DFI ARE STM
PREFERRED SALESTYPES
s HIGH VOLTAGE CAPABILITY
s U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
s JEDEC TO-3 METAL CASE
s NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208D, BU508D and BU508DFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
1
2
TO-3
TO-218
3
3
2
2
1
ISOWATT218 ¹
INTERNAL SCHEMATIC DIAGRAM
For TO-3 :
C = Tab
E = Pin2.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
V_CEO
V EBO
I_C
I_CM
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (I_B = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (t_p < 5 ms)
P_tot Total Dissipation at T_c = 25 ^oC
Tstg St orage Temperature
Tj
Max. Operating Junction Temperature
June 1998
Value
1 500
700
10
8
15
TO - 3 TO - 218 ISOWATT218
150
125
50
-65 to 175 -65 to 150 -65 to 150
175
150
150
Unit
V
V
V
A
A
W
o_C
o_C
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