BTW68 Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH SURGE CAPABILITY

BTW 68 (N)
....FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
BTW 68 Serie :
INSULATED VOLTAGE = 2500V_(RMS)
(UL RECOGNIZED : E81734)
SCR
DESCRIPTION
The BTW 68 (N) Family of Silicon Controlled Recti-
fiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
K
A
G
TOP 3
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(180° conduction angle)
BTW 68 Tc=80°C
BTW 68 N Tc=85°C
Average on-state current (180° BTW 68 Tc=80°C
conduction angle,single phase circuit) BTW 68 N Tc=85°C
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp=8.3 ms
tp=10 ms
I2t value
tp=10 ms
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Value
30
35
19
22
420
400
800
100
- 40 to + 150
- 40 to + 125
230
Unit
A
A
A
A2s
A/µs
°C
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
BTW 68
200 400
200 400
BTW 68 / BTW 68 N
Unit
600 800 1000 1200
600 800 1000 1200 V
March 1995
1/5