BTW67 Datasheet, PDF (1/5 Pages) STMicroelectronics – 50A SCRs

STANDARD
BTW67 and BTW69 Series
50A SCRs
MAIN FEATURES:
Symbol
Value
Unit
I_T(RMS)
50
A
V_DRM/V_RRM
600 to 1200
V
I_GT
80
mA
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V RMS), complying
with UL standards (file ref: E81734).
RD91
(BTW67)
TOP3
(BTW69)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I_T(RMS) RMS on-state current
(180° conduction angle)
I_T(AV)
Average on-state current
(180° conduction angle)
I_TSM
Non repetitive surge peak on-state current
I^²t
dI/dt
I_GM
P_G(AV)
T_stg
Tj
V_RGM
I^²t Value for fusing
Critical rate of rise of on-state current I_G =
2 x I_GT , tr ≤ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
RD91
TOP3 Ins.
RD91
TOP3 Ins.
tp = 8.3 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tc = 70°C
50
A
Tc = 75°C
Tc = 70°C
32
A
Tc = 75°C
610
Tj = 25°C
A
580
Tj = 25°C
1680
A²S
Tj = 125°C
50
A/µs
Tj = 125°C
8
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
5
V
April 2001 - Ed: 4
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