BFY50 Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN medium power transistors

BFY50/51
MEDIUM POWER AMPLIFIER
DESCRIPTION
The BFY50 and BFY52 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are intended for general purpose
linear and switching applications.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEO
V EBO
I_C
I_CM
Ptot
Tstg
T_j
Collect or-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (t_p < 5 ms)
Total Dissipation at Tamb ≤ 25 ^oC
at T_case ≤ 25 ^oC
St orage Temperature
Max. Operating Junction Temperature
November 1997
Value
BFY50
BFY51
80
60
35
30
6
1
1.5
0.8
5
-65 to 200
200
Unit
V
V
V
A
A
W
W
o_C
o_C
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