BD909 Datasheet, PDF (1/6 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

BD909/911
®
BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD909 and BD911 are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
power linear and switching applications.
The complementary PNP types are BD910 and
BD912 respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V_CBO Collector-Base Voltage (I_E = 0)
V_CEO Collector-Emitter Voltage (I_B = 0)
V_EBO Emitter-Base Voltage (I_C = 0)
I_E,I_C Collector Current
I_B
Base Current
P_tot Total Dissipation at T_c ≤ 25 ^oC
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
October 1999
NPN
PNP
Value
BD909
BD911
BD910
BD912
80
100
80
100
5
15
5
90
-65 to 150
150
Un it
V
V
V
A
A
W
o_C
o_C
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