BD533_03 Datasheet, PDF (1/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

BD533 BD535 BD537
®
BD534 BD536 BD538
COMPLEMENTARY SILICON POWER TRANSISTORS
s BD534, BD535, BD536, BD537 AND BD538
ARE STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD533, BD535, and BD537 are silicon
Epitaxial-Base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
medium power linear and switching applications.
The complementary PNP types are BD534,
BD536, and BD538 respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCES Collector-Emitter Voltage (VBE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC,IE Collector and Emitter Current
IB
Base Current
Ptot Total Dissipation at T_c ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
February 2003
NPN
PNP
BD533
BD534
45
45
45
Value
BD535
BD536
60
60
60
5
8
1
50
-65 to 150
150
BD537
BD538
80
80
80
Unit
V
V
V
V
A
A
W
o_C
o_C
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