BD336 Datasheet, PDF (1/4 Pages) STMicroelectronics – SILICON PNP POWER DARLINGTON TRANSISTOR

BD336
SILICON PNP POWER DARLINGTON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s PNP DARLINGTON
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s GENERAL PURPOSE SWITCHING
s GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The BD336 is a silicon epitaxial-base PNP
transistor in Darlingon configuration mounted in
SOT-82 plastic package.
It is inteded for use in audio output stages
general amplifier and switching applications.
3
12
SOT-82
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 10ms)
Base Current
Total Dissipation at Tc ≤ 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
July 1997
Value
-100
-100
-5
-6
-10
-0.15
60
-65 to 150
150
Unit
V
V
V
A
A
A
W
o_C
o_C
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