BD239C Datasheet, PDF (1/4 Pages) STMicroelectronics – NPN SILICON POWER TRANSISTOR

®
BD239C
NPN SILICON POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The BD239C is a silicon epitaxial-base NPN
transistor in Jedec TO-220 plastic package.
It is inteded for use in medium power linear and
switching applications.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V _CER
V_CEO
V _EBO
IC
I_CM
I_B
Ptot
Ptot
Tstg
Tj
Parameter
Collector-Emit ter Volt age (R_BE = 100Ω)
Collector-Emitter Voltage (I_B = 0)
Emitt er-Base Voltage (I_C = 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at Tc ≤ 25 ^oC
Total Dissipation at Tamb ≤ 25 ^oC
St orage Temperature
Max. Operating Junction Temperature
April 1999
Value
115
100
5
2
4
0.6
30
2
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W
o_C
o_C
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