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BD235_03 Datasheet, PDF (1/5 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS
BD235 BD236
®
BD237 BD238
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD235 and BD237 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD236 and
BD238 respectively.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCER Collector-Base Voltage (RBE = 1KΩ)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current (tp < 5 ms)
Ptot Total Dissipation at Tc = 25 oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
February 2003
NPN
PNP
Value
BD235
BD237
BD236
BD238
60
100
60
100
60
80
5
2
6
25
-65 to 150
150
Unit
V
V
V
V
A
A
W
oC
oC
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