BCP55 Datasheet, PDF (1/4 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER

BCP55/56
MEDIUM POWER AMPLIFIER
s SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
s PNP COMPLEMENTS ARE BCP52 AND
BCP53 RESPECTIVELY
ADVANCE DATA
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEO
VCER
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Collector-Emitter Voltage (RBE = 1KΩ)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < ms)
Total Dissipation at Tc = 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
October 1997
Value
BCP55
BCP56
60
100
60
80
60
100
5
1
1.5
0.1
0.2
2
-65 to 150
150
Unit
V
V
V
V
A
A
A
A
W
o_C
o_C
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