AN4391 Datasheet, PDF (1/19 Pages) STMicroelectronics – New P-channel trench technology from ST for low power

AN4391
Application note
New P-channel trench technology from ST for low power DC-DC
conversions and load switching applications
Delfo Fusillo, Filippo Scrimizzi
Introduction
P-channel and N-channel MOSFETs show a different electrical performance. Due to lower
hole mobility (three times smaller than electrons), the magnitude of specific on-resistance is
greater in the P-channel structure. A larger die-size is needed to reach the same R_DS(on)
performance. However, an important advantage of P-channel devices is the simplicity and
the driving circuitry optimization. In this document, new STripFET VI DeepGATE trench P-
channel technology is deeply analyzed, from a technological point of view and in some of
most popular applications for P-channel FETs, such as: low power DC-DC conversions
(buck, boost) and load switches.
November 2013
DocID025506 Rev 1
1/19
www.st.com