AN3994 Datasheet, PDF (1/53 Pages) STMicroelectronics – One of the bigger challenges

AN3994
Application note
Managing the best in class MDmesh™ V and MDmesh™ II
super junction technologies: driving and layout key notes
Introduction
One of the bigger challenges of the 21^st century is to deal with the growing need for power
and, at the same time, the necessity of product compactness.
The new MDmesh™ V series from STMicroelectronics, based on the super junction
concept, meets these targets by offering an extremely low R_DS(on) value in a given package,
unobtainable in standard HV MOSFETs.
In addition to the dramatic reduction of R_DS(on), super junction MOSFETs are extremely fast
in transients and this may lead to some issues when a better performing technology
replaces an older version on the same board with the same driving network.
The two main components in the ST super junction MOSFET family (MDmesh™ II and
MDmesh™ V) are analyzed and compared in terms of energy losses, voltage, and current
rates. It is shown how the external driving network impacts on their performances.
Furthermore, a separate section is dedicated to the layout parasitic effects and their impact
on MOSFET behavior.
It is clear in the end that layout can be crucial, especially when managing very fast
transients, and it must be carefully planned in order to help the MOSFET exploit its best
potential.
December 2011
Doc ID 022380 Rev 1
1/53
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