AM83135-040 Datasheet, PDF (1/3 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

AM83135-040
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 40 W MIN. WITH 5.1 dB GAIN
PRELIMINARY DATA
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
AM83135-040
BRANDING
AM83135-40
DESCRIPTION
The AM83135-040 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
PIN CONNECTION
This device is characterized at 10µsec pulse width
and 10% duty cycle, but is capable of operation
over a range of pulse widths, duty cycles, and
temperatures, and can withstand a 3:1 output
VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization,
and computerized automatic wire bonding tech-
niques ensure high reliability and product consist-
ency (including phase characteristics).
The AM83135-040 is supplied in the IMPAC™ Her-
metic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C)
Symbol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation* (TC ≤ 50˚C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Value
Unit
167
W
8.0
A
46
V
250
°_C
− 65 to +200
°_C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
1.2
°_C/W
September 1992
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