AM83135-015 Datasheet, PDF (1/3 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

AM83135-015
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 15 W MIN. WITH 5.2 dB GAIN
PRELIMINARY DATA
.310 x .310 2LFL (S064)
DESCRIPTION
The AM83135-015 device is a high power silicon
bipolar NPN transistor specifically designed for
S-Band radar pulsed output and driver applica-
tions.
This device is characterized at 100µsec pulse
width and 10% duty cycle, but is capable of op-
eration over a range of pulse widths, duty cycles,
and temperatures, and can withstand a 3:1 out-
put VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization,
and computerized automatic wire bonding tech-
niques ensure high reliability and product consis-
tency (including phase characteristics).
The AM83135-015 is supplied in the IMPAC™
Hermetic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and
is intended for military and other high reliability
applications.
ORDER CODE
AM83131-015
BRANDING
83135-15
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C)
Symbol
Parameter
PDISS
IC
VCC
TJ
TSTG
Power Dissipation* (TC ≤ 50˚C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
Unit
71
W
3.0
A
46
V
250
°_C
− 65 to +200
°_C
2.8
°_C/W
July 27, 1994
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