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| AM83135-010 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS | |||
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AM83135-010
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 10 W MIN. WITH 5.0 dB GAIN
.310 x .310 2LFL (S064)
hermetically sealed
DESCRIPTION
ORDER CODE
AM83135-010
BRANDING
83135-10
The AM83135-010 device is a high power silicon
bipolar NPN transistor specifically designed for
S-Band radar pulsed output and driver applica-
tions.
PIN CONNECTION
This device is characterized at 100µsec pulse
width and 10% duty cycle, but is capable of op-
eration over a range of pulse widths, duty cycles,
and temperatures, and can withstand a 3:1 out-
put VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization,
and computerized automatic wire bonding tech-
niques ensure high reliability and product consis-
tency (including phase characteristics).
The AM83135-010 is supplied in the IMPACâ¢
hermetic metal/ceramic package with internal
input/output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation* (TC ⤠50°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Value
Unit
50
W
2
A
46
V
250
°C
â 65 to +200
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
4.0
°C/W
July 27, 1994
1/4
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