AM83135-005 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

AM83135-005
RF & MICROWAVE TRANSISTORS
........ ^{S-BAND RADAR APPLICATIONS}
REFRACTORY/GOLD METALL IZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P_OUT = 5.0 W MIN. WITH 5.2 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
O RDER CODE
AM83135-005
BRANDING
83135-5
DE SC RI P TI O N
The AM83135-005 device is a medium power sili-
con bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths. duty cycles and tempera-
tures, and can withstand a 5:1 output VSWR.
Low RF thermal resistance, refractory/gold metal-
lization, and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM83135-005 is supplied in the AMPAC™
Hermetic Metal/Ceramic package with internal In-
put/Output matching circuitry, and is intended for
military and other high reliability applications.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C)
Sy mb o l
PD IS S
I_C
V_CC
T_J
T_STG
Parameter
P ower Dissipation*
Device Current*
(TC ≤ 100°C)
Collector-Supply Voltage*
J un ction Temperature (Pulsed RF Operation)
S torage Temperature
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
Va l u e
Unit
40
W
1.8
A
34
V
250
°_C
− 65 to +200
°_C
THERMAL DATA
R_TH(j-c) J un ction-Cas e Thermal R e sistance*
*Applies only to rated RF a mplifier oper ation
August 23, 1996
3.75
°_C/W
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