AM83135-001 Datasheet, PDF (1/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

AM83135-001
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
10:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 1.0 W MIN. WITH 5.2 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
O RDER CODE
AM83135-001
BRANDING
83135-1
DE SC RI P TI O N
The AM83135-001 device is a medium power sili-
con bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 10:1 output VSWR.
Low RF thermal resistance, refractory/gold metal-
lization, and automatic wire bonding techniques
ensure high reliability and product consistency.
The AM83135-001 is supplied int the AMPAC™
Hermet ic/Ceramic package with internal In-
put/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Sy mb o l
Parameter
Va l u e
Unit
PD IS S
I_C
Power Dissipation*
Device Current*
(TC ≤100°C)
11.5
W
0.45
A
VCC
Collector-Supply Voltage*
34
V
T_J
Junction Temperature (Pulsed RF Operation)
250
°_C
TSTG
Storage Temperature
− 65 to +200
°_C
THERMAL DATA
R_TH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
February 3, 1997
13.0
°C/W
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