AM82731-050 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

AM82731-050
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
. EMITTER SITE BALLASTED
. RUGGEDIZED VSWR 3:1 @ 1 dB OVER-
DRIVE
. LOW THERMAL RESISTANCE
. INPUT/OUTPUT MATCHING
. OVERLAY GEOMETRY
. METAL/CERAMIC HERMETIC PACKAGE
. POUT = 50 W MIN. WITH 6 dB GAIN
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE
BRANDING
AM82731-050
82731-50
DESCRIPTION
The AM82731-050 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
The device is capable of operation over a wde
range of pulse widths, duty cycles and tempera-
tures and can withstand a 3:1 output VSWR with
a +1 dB input overdrive. Low RF thermal resist-
ance, refractory/gold metallization, and compu-
terized automatic wire bonding techniques ensure
high reliability and product consistency.
The AM82731-050 is supplied in the AMPAC™
Hermetic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25^°C)
Symb ol
Pa ra met er
P_DISS
Power Dissipation* (T_C ≤ 50°C)
IC
Device Current*
VCC
Collector-Supply Voltage*
T_J
Junction Temperature (Pulsed RF Operation)
T_STG
Storage Temperature
Value
167
Unit
W
8
A
46
V
250
°_C
− 65 to +200
°_C
THERMAL DATA
R_TH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
August 1992
1.2
°C/W
1/4