AM82731-025 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

AM82731-025
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
. LOW PARASITIC, DOUBLE LEVEL MET-
AL DESIGN
. REFRACTORY/GOLD METALLIZATION
. EMITTER SITE BALLASTED
. 3:1 VSWR @ 1 dB OVERDRIVE
. LOW RF THERMAL RESISTANCE
. INPUT/OUTPUT IMPEDANCE MATCHING
. OVERLAY GEOMETRY
. METAL/CERAMIC HERMETIC PACKAGE
. P_{OUT =} 25 W MIN. WITH 6.2 dB GAIN
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE
AM82731-025
BRANDING
82731-25
DESCRIPTION
The AM82731-025 device is a high power silicon bi-
polar NPN transistor specifically designed for S-Band
radar pulsed output and driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles, and temperatures and
can withstand a 3:1 output VSWR with a +1dB input
over drive. Low RF thermal resistance, refrac-
tory/gold metallization, and automatic wire bonding
techniques ensure high reliability and product con-
sistency (including phase characteristics).
The AM82731-025 is supplied in the Hermetic Met-
al/Ceramic package with internal Input/Output im-
pedance matching circuitry, and is intended for mili-
tary and other high reliability applications.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
PDISS
Pa ra met er
Power Dissipation* (TC ≤ 50°C)
Ic
Device Current*
V_CC
Collector-Supply Voltage*
TJ
Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
Value
100
Unit
W
4
A
46
V
250
°C
− 65 to +200
°C
THERMAL DATA
R_TH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
August 1992
2.0
°C/W
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