AM82223-010 Datasheet, PDF (1/3 Pages) STMicroelectronics – TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS

AM82223-010
RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
. EMITTER SITE BALLASTED
. _∞:1 VSWR CAPABILITY AT RATED
CONDITIONS
. LOW THERMAL RESISTANCE
. INPUT/OUTPUT MATCHING
. OVERLAY GEOMETRY
. METAL/CERAMIC HERMETIC PACKAGE
. POUT = 9 W MIN. WITH 6.5 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
AM82223-010
BRANDING
82223-10
DESCRIPTION
The AM82223-010 is a common base, silicon
NPN bipolar transistor designed for high gain
and efficiency in the 2.2 − 2.3 GHz frequency
range.
Suitable for hi-rel aerospace telemetry applica-
tions, the AM82223-010 is provided in the indus-
try-standard AMPAC™ metal/ceramic hermetic
package and incorporates internal input and out-
put impedance matching structures along with a
rugged, emitter-site ballasted overlay die geome-
try.
AM82223-010 is capable of withstanding _∞:1
load mismatch at any phase angle under full
rated operating conditions.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symbol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation* (TC ≤ 75˚C)
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
*Applies only to rated RF amplifier operation
NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
Value
28
1.2
26
200
− 65 to +200
4.4
Unit
W
A
V
°_C
°_C
°_C/W
August 31, 1994
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